TEM nanoscale strain mapping autostrain

  • Decription
  • Specification
  • Consumables

Decription

Novel Automated Strain Mapping Solution for TEM/STEM (Patent pending) based on nanobeam precession diffraction patterrns in combination with DigiSTAR. Precision up to 0.02% (200kV FEG) with spatial resolution up to 2nm attainable (FEG-TEM).

In combination with TOPSPIN simultaneous orientation/ phase/strain/STEM maps are possible

Strain maps from the Si regions of a pMOS device

  • x and y-directions aligned with [220] and [002] directions in Si.
  • Localized biaxial tensile strain close to contact edges.

Strain profile of an Si/SiGe layer

  • Strain in x-direction is near zero, indicating a coherent interface

Specification

Features:
• High spatial resolution, high precision strain mapping in modern semiconductor devices
• Acquisition of STEM reference image
• Ultra-fast nanobeam precession electron diffraction scanned acquisition
• Typical acquisition time: 5-10 min (150×150)
• Time per pixel: 10-40 ms Analysis time 5-10 min
• Automated local strain analysis via AppFive proprietary algorithm
• Acquisition from individual positions, line profiles, areas
• Spatial resolution < 2 nm attainable (FEG TEM)
• Monitor engineered strain distributions in modern semiconductor devices
• Expected sensitivity : < 2 x 10-4
• Intuitive workflow